CN201210204052
CN103427092A
微信扫码查看/分享专利
|
摘要:本发明提供一种包覆结构复合导电陶瓷材料和阴极接触层及其制备方法,所述复合导电陶瓷材料可作为SOFC阴极-连接体之间的接触层,具有由尖晶石结构相包覆钙钛矿结构相形成的包覆结构。此类复合材料在表现出还原尖晶石材料的低温烧结活性的同时,由于高致密度及高电导钙钛矿颗粒的使用,可有效地提高复合材料的电导性能,其结合了钙钛矿电导率高及还原后的尖晶石粉体烧结活性好的优点。此类包覆结构复合材料成本低廉,性能优越,有望取代昂贵的贵金属作为接触层材料,可极大地降低SOFC制备成本,具有极高的应用价值。
|
Abstract: The invention provides a coating-structure composite conducting ceramic material and a cathode contact layer, and their preparation method. The coating-structure composite conducting ceramic material can be used as a contact layer between a SOFC cathode and a connector and has a coating structure composed of a spinel structure and perovskite coated by the spinel structure. The coating-structure composite conducting ceramic material has low-temperature sintering activity of a spinel material. Through use of high-density and high-conductance perovskite particles, composite material electroconductibility can be effectively improved, and high perovskite electroconductibility and good sintering activity of reduced spinel powder are obtained. The coating-structure composite conducting ceramic material has a low cost and excellent performances, can replace an expensive precious metal as a contact layer material, can greatly reduce a SOFC preparation cost and has high application values.
|
申请人: 中国科学院上海硅酸盐研究所
|
Applicant: SHANGHAI INST CERAMICS
|
地址: 200050 上海市长宁区定西路********(隐藏)
|
发明(设计)人: 辛显双 王绍荣 钱继勤 占忠亮 温廷琏
|
Inventor: XIN XIANSHUANG; WANG SHAORONG; QIAN JIQIN; ZHAN ZHONGLIANG; WEN TINGLIAN
|
主分类号: H01M4/86
|
分类号: H01M4/86 H01M4/88
|
|