CN201210489224
CN102945950A
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摘要：本发明公开了一种在金属集流器上原位生长碳纳米管阵列的方法，所述方法包括制备具有催化剂层/缓冲层/金属箔三层结构的基底及采用热CVD法在上述基底上原位生长碳纳米管阵列步骤。由本发明方法生长的碳纳米管阵列的高度可达80～300μm，直径达6～20nm，少壁且每根碳纳米管均与集流器直接牢固结合。经实验得知：所制备的碳纳米管阵列负极材料在低速和高速充放电条件下均具有高比容量，循环稳定性好。且本发明方法具有工艺简单、设备要求低等优点，所制备的碳纳米管阵列具有作为支架加载其它活性材料制备高性能复合电极材料的巨大潜力，具有十分广阔的应用前景。
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Abstract： The invention discloses a method for in-situ growth of a carbon nanotube array on a metal current collector. The method includes the steps: preparing a substrate with a catalyst layer, a buffer layer and a metal foil layer; and growing the carbon nanotube array on the substrate by a hot CVD (chemical vapor deposition) method. The height of the carbon nanotube array grown by the method can reach 80-300 micrometers, the diameter of the carbon nanotube array reaches 6-20 nanometers, the carbon nanotube array has fewer walls, and each carbon nanotube is directly and firmly combined with the current collector. From experiments, negative electrode materials of the prepared carbon nanotube array have high specific capacity and fine cyclic stability under low-speed and high-speed charge-discharge conditions. The method has the advantages of simple process, low equipment requirement and the like, and the prepared carbon nanotube array has a huge potential of serving as a support for loading other active materials for preparing high-performance composite electrode materials, and has a quite wide application prospect.
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申请人： 中国科学院上海硅酸盐研究所
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Applicant： SHANGHAI INST CERAMICS
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地址： 200050 上海市长宁区定西路********(隐藏)
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发明(设计)人： 冷越 董绍明 胡建宝 王震 丁玉生 何平 高乐 张翔宇
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Inventor： LENG YUE; DONG SHAOMING; HU JIANBAO; WANG ZHEN; DING YUSHENG; HE PING; GAO LE; ZHANG XIANGYU
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主分类号： H01M4/38
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分类号： H01M4/38
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